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Соболев Николай Андреевич The University: Aveiro University

Country: Portugal


Department: Departamento de Física and I3N (Institute of Nanostructures, Nanomodelling and Nanofabrication)

Academic Position: Associate Prof

Academic Degrees and Titles: Dr. rer. nat., Prof.

Winner of open international NUST «MISiS»  grant competition  to support the invitation of world's leading scientists for short term joined research projects
Research areas

multi-scale modeling of materials behaviour; nanofabrication , micro- and nanotechnologies; polymer systems with nano- and microcontrolled structures; physical characterization of nanostructures.

Area of Expertise:
Quantum size_ semiconductor structures; radiation effects; optical and magnetic resonance spectroscopy; magnetic nanostructures; multiferroics; memristors.

Major Scientific Advances:
Nikolai A. Sobolev published 130 articles in international peer-reviewed journals, more than 45 papers in international conference proceedings, held multiple invited talks at international conferences; he is co-author of 6 Inventor Certificates of the USSR.
N.A. Sobolev is one of the pioneers of  implantation and radiation defect studies in quantum-size_ semiconductor structures. He discovered the coherent amorphization of the Si and Ge layers in Si/Ge superlattices and of GaAs and AlAs layers in GaAs/AlAs superlattices; enhanced radiation hardness of Si/Ge superlattices, Ge/Si and InAs/GaAs quantum dot structures, as well as of InAs/GaAs quantum dot lasers in comparison to respective bulk materials and two-dimensional structures.
N.A. Sobolev synthetized for the first time magnetic nanocystals in silicon through co-implantation of Mn and As or of Mn and Sb ions.
N.A. Sobolev also contributed to adjacent fields of the radiation physics of semiconductors:
– He found and investigated several dozens of new luminescence centers in irradiated silicon;
– Found for the first time radiation defects in silicon incorporating Ge impurity atoms which are stable far above room temperature;
– Described for the first time an interaction between shallow donors and radiation defects in GaAs and InP irradiated at room temperature;
– Suggested, implemented and investigated rapid thermal annealing of transmutation-doped semiconductors;
– N.A.Sobolev accomplished a series of works in the field of the radiation physics and technology of semiconductor devices and laser crystals;
– Accomplished a series of works in the field of multiferroics and magnetic nanostructures.

Research Projects and Contracts:
- In 1980-1998 headed multiple Soviet and Belarusian research projects.
- In the subsequent years headed and coordinated teams in the framework of European, bilateral and Portuguese national projects:
  • European Network of Excellence SANDiE – Self-Assembled Semiconductor Nanostructures for New Devices in Photonics and Electronics (NMP4-CT-2004-500101), 2004-2012 (Leader of the Portuguese team);
  • European INTAS project №03-51-5015 “Self-organized ultra-small Ge quantum dots in Si with very high density for nanoelectronics”, 2004-2007 (Leader of the Portuguese team);
  •  European project MOLD-NANONET FP7-INCO-2011-6, Grant Agreement no. 294953, 2011-2014 (Leader of the Portuguese team);
  • Co-ordinator of 9 bilateral Portuguese-German, Portuguese-Spanish, Portuguese-Polish, Portuguese-Brazilian and Portuguese-Mexican projects; Co-ordinator of various Portuguese national projects.
Referee, Reviewer:
N.A. Sobolev chaired and organized multiple international conferences, he is a member of the Editorial Boards of 5 international scientific journals and a reviewer of numerous journals.

Scientific Recognition:
 N.A. Sobolev repeatedly held Visiting Professor and Visiting Researcher positions at German universities (TU Berlin, Jena and Ulm) and now also at the National University of Science and Technology “MISiS”, Moscow. He held multiple invited talks at international conferences.

Research results:

A finite elements approach to calculate the anisotropic magnetoelectric characteristics of Metglas / single-crystalline LiNO3 (LNO) or LiTaO3 (LTO) piezoelectric laminates has been developed. The influence of the characteristics of the used materials on the parameters of the magnetoelectric effect in the laminates has been performed.

The results of the investigations of the static and dynamic magnetoelectric effects in the laminate structures Metglas / LNO (LTO) are reported. The bidomain structure in the ferroelectrics has been achieved by an original method protected by a patent issued to the project group. Bilayered structures Metglas / LNO (LTO) with different crystallographic cuts of the ferroelectric have been designed and fabricated. Measurements of the static and dynamic magnetoelectric effect have been made on these structures. The obtained results have been analysed and interpreted.

The following work has been accomplished in the first phase:

1.                Numerical calculations of anisotropic magnetoelectric properties of bilayered Metglas / LNO (LTO) have been performed. It has especially been shown that the choice of the crystallographic cut of the ferroelectric strongly influences the magnetoelectric effect parameters in the laminates. This choice is determined by the sensor type, for which the laminates are designed.

2.                Bilayered laminates Metglas / LNO (LTO) with different configurations of the piezoelectric have been designed and fabricated.

3.                Magnetoelectric and noise characteristics of the obtained structures have been measured in the static and dynamic regimes.

4.                The obtained results have been analysed and interpreted.

5.                In the framework of the Master course 11.04.04 Electronics and Nanoelectronics, the lecture course “Physics and Technology of Graphen and Other 2D Semiconductors” has been developed and respective lecture notes elaborated.

6.                A paper has been published in the journal Scientific Reports (Nature group, 1st quartile, impact factor = 5.578). Other two articles and two chapters for a Springer book are in preparation.

7.                A positive decision on the patent claim “A method of formation of bidomain structure in sinle-crystalline ferroelectric plates” № 2014105877/05(009355) has been obtained.

8.                Six presentations have been made at international conferences.

N.A. Sobolev published 180 articles in international peer-reviewed journals and more than 45 papers in international conference proceedings.

Patents, Intellectual Property:
N.A. Sobolev is co-author of 6 Inventor Certificates of the USSR.

Lectures, Workshops held at NUST MISiS:

Lectures, seminars and practical classes to the course “Physics of nanostructured matherials” (September – December 2014).

Presentation "Radiation effects in quantum-size_ A3B5 semiconductor structures".

Christmas lecture “Physics studies at Russain and German universities: similarities and differences of the two paradigms”.

Sobolev_Chapter 1.pdf

Sobolev_Chapter 2.pdf

Sobolev_Chapter 3.pdf

Sobolev_Chapter 4.pdf


MISiS2014_Rad Eff in III-V Nano.pdf


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