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Морозов Сергей Владимирович

Morozov Sergey Vladimirovich

University: Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences (IMT RAS), Chernogolovka, Russia.

Academic degree: Doctor of Physical and Mathematical Sciences.

Positions held: Head of the "Functional low-dimensional structures" laboratory in NUSTMISA, Head of Laboratory "Physics of Semiconductor Nanostructures" in IMT RAS.

Research interests: physics of graphene and other quasi-two-dimensional materials, electronic transport properties of two-dimensional systems, tunneling processes in semiconductor heterostructures.

Main scientific achievements: As a result ofjoint research with the group of prof. A.Geim from the Manchester University a new  class of materials-two-dimensional crystals was discovered and the key experiments were performed to study the properties of graphene-graphite mono layer sheets.

Research projects and contracts: director of several RFBR and RAS Presidium grants

Scientific recognition: In 2008 and 2014 Morozov S.V. was awarded by Scopus Awards Russia and Thomson Reuters Citation Award, as high-cited Russian researcher.

Publications: About 60 works published with more than 40,000 citations.H-index– 32.

Activityin NUST “MISiS”: management of the 5-100 project 

Lectures, seminars, readapt NUST “MISiS": Lecture "Graphene: Physics and application prospects".




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