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Wide-band Gap Semiconductors and Devices Based Thereon

Professor Alexander Y. Polyakov

Project target

The project aims to determine correlation between heterostructures properties and gallium nitride based devices characteristics: field-effect-transistor elements, light emitting diodes, photodevices, radiation detectors, as well as between silicon carbide structures and diamond properties and characteristics of based thereon detector and rectification structures. Another aim is to determine correlation between different kinds of defects, their introduction and evolution during operation, with change of devices characteristics during operation and irradiation.

Project objectives

The task of the project is studying deep level defects in wide-band gap semiconducting materials and devices as in the case of AlGaN/GaN, GaN/InGaN and AlGaN/AlGaN based LED, silicon carbide based powered rectification structure as well as detector and rectification structures based on nitrides III, silicon carbide and diamond. 

Uniqueness project

It is extremely difficult to organize parallel studies of devices characteristics and properties of their materials and simultaneously studies of the external factors impact on the devices and materials. Meanwhile such investigation is highly valuable for understanding the reasons for nonideality of devices performance, their degradation due to aging as well as irradiation. In this respect the laboratory ideally combines experience and knowledge of specialists in superconductor physics and specialists in superconducting devices. Broad international collaboration provides for the team access to the best device structures samples and devices of top quality. This accounts for uniqueness if the research.

Devices based on wide-band gap semiconducting materials, nitrides III, silicon carbide and diamond, are at the very edge of semiconducting electronics development. Nevertheless, their potential cannot be fully realized as the devices parameters are substantially impacted by point and extensive defects of the structure. Therefore understanding the nature and electronic structure of such defects and finding a way to essentially influence such defects, envisions possibilities of new cost efficient light sources, new systems of optical recording and data reading, new mighty devices of power electronics.

The research team actively contributes to world research process by making a lot of reports at major international conferences, preparing reviews on up to date issues in Physics and Materials Science  in the field of wide-band gap semiconducting materials, coaching post and graduate students.

The team collaborates with leading scientific centers in the USA, Korea and France.

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